Title :
Low threshold room temperature pulsed and -57 degrees C CW operations of 1.3 mu m GaInAsP/InP circular planar buried heterostructure surface-emitting lasers
Author :
Baba, Toshihiko ; Suzuki, Katsumasa ; Yogo, Yukiaki ; Iga, Kenichi ; Koyama, Fumio
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
7/1/1993 12:00:00 AM
Abstract :
Room temperature pulsed lasing operation of a 1.3- mu m GaInAsP/InP vertical-cavity surface-emitting laser has been achieved by using an effective carrier confinement of circular planar buried heterostructure (CPBH) and high reflectivity SiO/sub 2//Si dielectric multilayer mirrors. The threshold current for a device having a nearly 12- mu m-diameter active region was 34 mA at 24 degrees C under pulsed operation. The optimized window cap structure reduces the series resistance to 6 approximately 15 Omega . Continuous wave lasing was also obtained up to -57 degrees C, and the threshold below -61 degrees C was still lower than 22 mA.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; optical films; reflectivity; semiconductor lasers; silicon; silicon compounds; -57 degC; 1.3 micron; 12 micron; 15 ohm; 24 degC; 34 mA; CW operations; GaInAsP-InP; IR; SiO/sub 2/-Si; active region; circular planar buried heterostructure surface-emitting lasers; dielectric multilayer mirrors; effective carrier confinement; high reflectivity; low threshold; optimized window cap structure; pulsed lasing operation; pulsed operation; room temperature; semiconductors; series resistance; vertical-cavity; Carrier confinement; Dielectrics; Indium phosphide; Mirrors; Nonhomogeneous media; Optical pulses; Reflectivity; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
