Title :
Nonuniform threshold voltage instabilities in p-channel silicon-gate m.o.s. transistors
Author :
Watt, A.S.M. ; Elliot, A.B.M.
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
To account for the changes in the Cgs/Vgs and Ids/Vgs characteristics of silicon-gate m.o.s. transistors after a period of b.t stress, a theoretical model is proposed in which charge trapped at the Si¿SiO2 interface is distributed nonuniformly along the length of the channel.
Keywords :
field effect transistors; Si-SiO2 interface; p-channel Si gate MOS transistors; theoretical model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750427
