• DocumentCode
    930444
  • Title

    Nonuniform threshold voltage instabilities in p-channel silicon-gate m.o.s. transistors

  • Author

    Watt, A.S.M. ; Elliot, A.B.M.

  • Author_Institution
    Post Office Research Centre, Ipswich, UK
  • Volume
    11
  • Issue
    23
  • fYear
    1975
  • Firstpage
    559
  • Lastpage
    560
  • Abstract
    To account for the changes in the Cgs/Vgs and Ids/Vgs characteristics of silicon-gate m.o.s. transistors after a period of b.t stress, a theoretical model is proposed in which charge trapped at the Si¿SiO2 interface is distributed nonuniformly along the length of the channel.
  • Keywords
    field effect transistors; Si-SiO2 interface; p-channel Si gate MOS transistors; theoretical model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750427
  • Filename
    4236956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930444