• DocumentCode
    930460
  • Title

    Noise measure and temperature effect in small-signal GaAs IMPATT amplifiers

  • Author

    Borgne, A. Le ; Perichon, R. ; Constant, E.

  • Author_Institution
    Université des Sciences et Techniques, Villeneuve D´´Ascq, France
  • Volume
    62
  • Issue
    4
  • fYear
    1974
  • fDate
    4/1/1974 12:00:00 AM
  • Firstpage
    535
  • Lastpage
    537
  • Abstract
    For two kinds of GaAs IMPATT diodes (flat and two-step doping profile) it is shown that an improved experimental noise measure is obtained by increasing temperature. This can be chiefly explained by a large decrease of GaAs electron saturated drift velocity, as temperature is increased.
  • Keywords
    Capacitance; Charge carrier processes; Electron emission; Electron traps; Energy states; Gallium arsenide; Gold; Noise measurement; Schottky diodes; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9469
  • Filename
    1451399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930460