Title :
Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasers
Author :
Mathur, Atul ; Osinski, Julian S. ; Grodzinski, Piotr ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
A study of the effects of biaxial strain on the performance of low-threshold 1.3- mu m In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y//InP quantum-well lasers is presented. Lasers with lattice-matched, compressive-strained, and tensile-strained quantum-wells were fabricated to compare the effect of strain on various device parameters. Threshold current densities as low as 187 A/cm/sup 2/ for a two-quantum-well device with 0.85% compressive strain were obtained.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 1.3 micron; IR; InGaAsP-InP; biaxial strain; compressive-strained; device parameters; lattice-matched quantum-well lasers; low-threshold; strained QW lasers; tensile-strained; threshold current densities; two-quantum-well device; Capacitive sensors; Indium phosphide; Laser transitions; Lattices; Optical design; Optical materials; Optical sensors; Quantum well lasers; Radiative recombination; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
