Title :
Depletion m.o.s. power transistors
Author :
Farzan, B. ; Salama, C.A.T.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
A new depletion m.o.s. transistor is proposed. The structure uses anisotropic etching to define the channel in an n¿p epitaxial silicon slice. The fabrication, characteristics and power capabilities of the device are discussed.
Keywords :
field effect transistors; power transistors; anisotropic etching; depletion MOS power transistor; n-p epitaxial Si slice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750431
