Title :
Optimum junction diameters of 80-GHz band IMPATT diodes
Author_Institution :
Nippon Telephone and Telegraph Public Corporation, Tokyo, Japan
fDate :
4/1/1974 12:00:00 AM
Abstract :
Output powers of 80-GHz band abrupt-junction IMPATT diodes are found to be limited not only by thermal restriction, but also by electronic restriction. Equations giving optimum junction diameters at different junction temperature rises are derived analytically, considering these two factors. When compared with the experimental results, they are verified to be useful for the optimum design of millimeter-wave IMPATT diodes.
Keywords :
Breakdown voltage; Cutoff frequency; Diodes; Equations; Millimeter wave communication; Power generation; Telephony; Temperature; Thermal conductivity; Thermal resistance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9470
