• DocumentCode
    930489
  • Title

    Optimum junction diameters of 80-GHz band IMPATT diodes

  • Author

    Ohmori, M.

  • Author_Institution
    Nippon Telephone and Telegraph Public Corporation, Tokyo, Japan
  • Volume
    62
  • Issue
    4
  • fYear
    1974
  • fDate
    4/1/1974 12:00:00 AM
  • Firstpage
    537
  • Lastpage
    538
  • Abstract
    Output powers of 80-GHz band abrupt-junction IMPATT diodes are found to be limited not only by thermal restriction, but also by electronic restriction. Equations giving optimum junction diameters at different junction temperature rises are derived analytically, considering these two factors. When compared with the experimental results, they are verified to be useful for the optimum design of millimeter-wave IMPATT diodes.
  • Keywords
    Breakdown voltage; Cutoff frequency; Diodes; Equations; Millimeter wave communication; Power generation; Telephony; Temperature; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9470
  • Filename
    1451400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930489