• DocumentCode
    930501
  • Title

    Switching and memory effects in phosphorus-ion-implanted ZnSe devices

  • Author

    Shin, B.K. ; Park, Y.S.

  • Author_Institution
    Systems Research Laboratories, Inc., Dayton, Ohio.
  • Volume
    62
  • Issue
    4
  • fYear
    1974
  • fDate
    4/1/1974 12:00:00 AM
  • Firstpage
    538
  • Lastpage
    540
  • Abstract
    Switching and memory effects have been observed in diodes fabricated from phosphorus-implanted ZnSe. The materials having a carrier concentration of about 1018cm-3were implanted at 90 keV to an ion dose of 1016cm-2. The switching and memory phenomena are interpreted in terms of filling and emptying of the trapping centers in the implanted p-type layer.
  • Keywords
    Diodes; Electrical capacitance tomography; Frequency; Ionization; Power generation; Temperature; Voltage; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9471
  • Filename
    1451401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930501