Title :
A small-signal frequency response model with electron and hole transports in multiquantum-well lasers
Author :
Suzuki, Nobuo ; Ishikawa, Masayuki
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
7/1/1993 12:00:00 AM
Abstract :
The authors propose a small-signal frequency response model for high-speed multi-quantum-well (MQW) lasers. Electrons and holes are treated independently to deal with the high-frequency range faster than the carrier thermionic emission from the well, where the ambipolar approximation is unsuitable. The electron current modulates the stimulated emission even in the high-frequency range beyond the hole transport limit. Therefore, the present model predicts a larger response than the conventional ambipolar model in the high-frequency range, and it gives a better explanation of the experimental results for high-speed MQW lasers.<>
Keywords :
approximation theory; frequency response; laser theory; semiconductor device models; semiconductor lasers; stimulated emission; ambipolar approximation; carrier mobility; carrier thermionic emission; electron current; electron transport; high-frequency range; high-speed; high-speed MQW lasers; hole transports; multiquantum-well lasers; optical modulation; small-signal frequency response model; stimulated emission; Charge carrier processes; Electron emission; Frequency response; Laser modes; Niobium; Predictive models; Quantum well devices; Quantum well lasers; Spontaneous emission; Thermionic emission;
Journal_Title :
Photonics Technology Letters, IEEE