Title :
Outmigration of gallium from Au-GaAs interfaces
Author :
Madams, C.J. ; Morgan, D.V. ; Howes, M.J.
Author_Institution :
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
Abstract :
Experimental evidence is presented which suggests that the degradation of Au-GaAs Schottky-barriers after annealing is due to the outmigration of gallium into the gold, resulting in the formation of an n+ region beneath the contact.
Keywords :
III-V semiconductors; Schottky-barrier diodes; diffusion in solids; gallium arsenide; gold; semiconductor-metal boundaries; AuGaAs interfaces; Ga; Schottky barriers; annealing; n+ region; outmigration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750440
