Title :
Gating demultiplexer integrated with MSM detector array in InGaAs/AlGaAs/GaAs for WDM
Author :
Fallahi, M. ; McGreer, K.A. ; Delâge, A. ; Templeton, I.M. ; Chatenoud, F. ; Barber, R.
Author_Institution :
Nat. Res. Council, Ottawa, Ont., Canada
fDate :
7/1/1993 12:00:00 AM
Abstract :
The authors demonstrate the integration of a grating demultiplexer with curved output waveguides and a MSM photodetector array in InGaAs/AlGaAs/GaAs operating in the 1- mu m wavelength region. The structure provides 38 channels with 1-nm channel spacing. The total loss, including scattering from the unmetallized grating, is about 17 dB. A channel crosstalk of -11 dB is obtained. The FWHM of the channel pass band is 0.5 nm.<>
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; multiplexing equipment; optical losses; optical waveguides; photodetectors; wavelength division multiplexing; 1 micron; 17 dB; IR; InGaAs-AlGaAs-GaAs; MSM detector array; Schottky contacts; Ti-Pt-Au; WDM; channel crosstalk; channel pass band; channel spacing; curved output waveguides; grating demultiplexer; monolithic integration; photodetector array; semiconductors; total loss; unmetallized grating; Arrayed waveguide gratings; Detectors; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Sensor arrays; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
