Title :
Efficiency versus doping profile in GaAs read-type IMPATT diodes
Author :
Hasegawa, F. ; Aono, Y.
Author_Institution :
University of Sheffield, Sheffield, England
fDate :
5/1/1974 12:00:00 AM
Abstract :
The influence of doping profile on the efficiency of GaAs Read-type IMPATT diodes has been studied experimentally. A diode with low breakdown voltage, or a diode with a low bias field in the drift region, gave the highest efficiency. The mechanism will be discussed, estimating the restriction of RF voltage amplitude and the change of phase relation between RF current and voltage.
Keywords :
Circuit stability; Circuit testing; Diodes; Doping profiles; Frequency; Gallium arsenide; Oscillators; Switches; Temperature; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9491
