Dielectric response function of breakdown plasma in silicon-controlled rectifiers

The real and imaginary parts of the dielectric constant of the plasma in silicon-controlled rectifier was studied as functions of frequency from 0.3 to 30 MHz for different injection levels of the current. The relaxation time was estimated to vary from 40 to 25 ns from lower injection levels to higher injection levels. The results also exhibit a nonlinear dependence of damping constant and plasma frequency on the injection level.