• DocumentCode
    930927
  • Title

    Ideal ohmic contacts to InP

  • Author

    Mills, H.T. ; Hartnagel, H.L.

  • Author_Institution
    University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
  • Volume
    11
  • Issue
    25
  • fYear
    1975
  • Firstpage
    621
  • Lastpage
    622
  • Abstract
    A new method of producing ohmic contacts to semiconducting n-type InP by the use of a slow alloying cycle with a P overpressure has resulted in improved contact fabrication. Gunn devices were produced with these contacts for the anode and cathode and their microwave characteristics were measured.
  • Keywords
    Gunn devices; III-V semiconductors; indium compounds; ohmic contacts; solid-state microwave devices; Gunn devices; InP; contact fabrication; microwave characteristics; ohmic contacts; slow alloying cycle;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750473
  • Filename
    4237003
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930927