Title :
Ideal ohmic contacts to InP
Author :
Mills, H.T. ; Hartnagel, H.L.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Abstract :
A new method of producing ohmic contacts to semiconducting n-type InP by the use of a slow alloying cycle with a P overpressure has resulted in improved contact fabrication. Gunn devices were produced with these contacts for the anode and cathode and their microwave characteristics were measured.
Keywords :
Gunn devices; III-V semiconductors; indium compounds; ohmic contacts; solid-state microwave devices; Gunn devices; InP; contact fabrication; microwave characteristics; ohmic contacts; slow alloying cycle;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750473
