Title :
Electronic Raman scattering from holes in InAs/GaAs self-assembled quantum dots
Author :
Aslan, B. ; Lockwood, D.J. ; Wasilewski, Z.R. ; Liu, H.C.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council, Ottawa, ON
Abstract :
A report is presented on the observation of hole excitations in unintentionally p-doped self-assembled InAs/GaAs quantum dots by resonant Raman spectroscopy. The small difference in the valence intraband energy values obtained by Raman and PL spectra is explained by the Coulomb interaction between electrons and holes. However, the reason why the maximum resonance occurs at a slightly higher energy than that of the hole excitation seen in Raman spectra is unknown.
Keywords :
III-V semiconductors; Raman spectra; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; valence bands; Coulomb interaction; InAs-GaAs; electronic Raman scattering; hole excitation; photoluminescence; resonant Raman spectroscopy; self-assembled quantum dots; valence intraband energy values;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072025
