• DocumentCode
    931018
  • Title

    Dynamic modelling of nonlinear microwave devices

  • Author

    Smith, I.

  • Author_Institution
    Central Res. Labs., Thorn EMI, Hayes, UK
  • Volume
    25
  • Issue
    18
  • fYear
    1989
  • Firstpage
    1237
  • Lastpage
    1239
  • Abstract
    An improved technique is presented here for modelling the dynamic large-signal properties of microwave devices such as GaAs MESFETs. The method is based on repeated harmonic balance analysis of a simple nonlinear circuit. Many of the sources of inconsistency in established modelling methods have been avoided, making more reliable circuit analysis possible.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; GaAs; MESFETs; circuit analysis; large-signal properties; nonlinear microwave devices; repeated harmonic balance analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890830
  • Filename
    43494
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=931018