DocumentCode :
931040
Title :
1.5 mu m band travelling-wave semiconductor optical amplifiers with window facet structure
Author :
Kitamura, Masayuki ; Honmou, H. ; Mito, I.
Volume :
25
Issue :
18
fYear :
1989
Firstpage :
1241
Lastpage :
1242
Abstract :
1.5 mu m band travelling-wave semiconductor optical amplifiers (TWAs), characterised by their window facet structure and symmetrised active waveguide, have been developed. 1.5 dB spectral gain ripple and 1.3 dB TE-TM mode gain difference at 22 dB signal gain were achieved simultaneously. An average facet reflectivity as low as 0.06% was estimated.
Keywords :
optical communication equipment; optical waveguide components; semiconductor junction lasers; 1.5 micron; 22 dB; TE-TM mode gain difference; average facet reflectivity; signal gain; spectral gain ripple; symmetrised active waveguide; travelling-wave semiconductor optical amplifiers; window facet structure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890832
Filename :
43496
Link To Document :
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