• DocumentCode
    931059
  • Title

    Characteristic temperature of GaInP/AlGaInP single quantum well lasers

  • Author

    Bour, D.P. ; Carlson, N.W. ; Evans, G.A.

  • Author_Institution
    David Sarnoff Res. Center, Princeton, NJ, USA
  • Volume
    25
  • Issue
    18
  • fYear
    1989
  • Firstpage
    1243
  • Lastpage
    1245
  • Abstract
    The characteristic temperature T0 of AlGaInP quantum well lasers is measured. T0 values fall between 50 and 70 K, with only a slight decrease for short-cavity devices, suggesting the insignificance of Auger recombination in these high-bandgap alloys. The low T0 values are likely to be due to the weak carrier confinement afforded by the structure.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 50 to 70 K; Auger recombination; GaInP-AlGaInP; characteristic temperature; high-bandgap alloys; short-cavity devices; single quantum well lasers; weak carrier confinement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890834
  • Filename
    43498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=931059