Title :
Low-frequency noise in HC1 processed IGFET´s
Author :
Cheng, Y.C. ; Haslett, J.W. ; Kendall, E.J.M. ; Kriegler, R.J. ; Scholz, F.J.
Author_Institution :
Bell-Northern Research, Ottawa, Ont., Canada
fDate :
6/1/1974 12:00:00 AM
Abstract :
The low-frequency noise performance has been determined for MOSFET´s prepared by adding varying amounts of gaseous HCl to the oxygen during thermal oxidation of the silicon. It appears that the surface state noise is significantly reduced, and that the remaining noise levels are due to thermal generation centers in the substrate.
Keywords :
Anisotropic magnetoresistance; Green´s function methods; Integral equations; Low-frequency noise; Magnetic anisotropy; Maxwell equations; Noise level; Noise reduction; Perpendicular magnetic anisotropy; Transducers;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9532
