• DocumentCode
    931185
  • Title

    Low-frequency noise in HC1 processed IGFET´s

  • Author

    Cheng, Y.C. ; Haslett, J.W. ; Kendall, E.J.M. ; Kriegler, R.J. ; Scholz, F.J.

  • Author_Institution
    Bell-Northern Research, Ottawa, Ont., Canada
  • Volume
    62
  • Issue
    6
  • fYear
    1974
  • fDate
    6/1/1974 12:00:00 AM
  • Firstpage
    859
  • Lastpage
    860
  • Abstract
    The low-frequency noise performance has been determined for MOSFET´s prepared by adding varying amounts of gaseous HCl to the oxygen during thermal oxidation of the silicon. It appears that the surface state noise is significantly reduced, and that the remaining noise levels are due to thermal generation centers in the substrate.
  • Keywords
    Anisotropic magnetoresistance; Green´s function methods; Integral equations; Low-frequency noise; Magnetic anisotropy; Maxwell equations; Noise level; Noise reduction; Perpendicular magnetic anisotropy; Transducers;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9532
  • Filename
    1451462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=931185