DocumentCode :
931423
Title :
Ion-implanted double-drift Ka-band diodes
Author :
Lee, D.H. ; Ying, R.S. ; Jamba, D.M.
Author_Institution :
Hughes Research Laboratories, Malibu, Calif.
Volume :
62
Issue :
7
fYear :
1974
fDate :
7/1/1974 12:00:00 AM
Firstpage :
1025
Lastpage :
1026
Abstract :
The application of a doubly charged boron (11B+2) beam to the formation of p-type drift regions in symmetrical Ka-band double-drift silicon IMPATT diodes is discussed. Devices fabricated with these implanted impurity distributions exhibited output powers ∼1.2 W with 10-percent conversion efficiencies over the frequency range of 29 to 39 GHz.
Keywords :
Annealing; Boron; Doping profiles; Epitaxial layers; Gaussian distribution; Impurities; Ion beams; Lattices; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1974.9553
Filename :
1451483
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=931423
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