DocumentCode :
931457
Title :
Dual spectral InGaAs=InP quantum-well infrared photodetector focal plane array
Author :
Bezinger, A. ; Liu, H.C. ; Aslan, B. ; Buchanan, M. ; SpringThorpe, A.J. ; Poole, P.J. ; Cardimona, D.A. ; Brown, G.J.
Author_Institution :
Inst. for Microst. Sci., Nat. Res. Council of Canada, Ottawa, Ont.
Volume :
43
Issue :
12
fYear :
2007
Firstpage :
685
Lastpage :
686
Abstract :
The realisation of an InGaAs/InP quantum-well infrared photodetector focal plane array imaging device is reported. The long-wave infrared response is based on the intersubband transition (intraband) in the quantum wells. In addition, a near infrared (interband) response is demonstrated. This work shows the potential of the InGaAs/InP materials system for multi-spectral imaging applications
Keywords :
III-V semiconductors; focal planes; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; InGaAs-InP; focal plane array; infrared photodetector; intersubband transition; long-wave infrared response; multispectral imaging; quantum-well;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20070966
Filename :
4237060
Link To Document :
بازگشت