Title :
Quantum-confined stark effect and ultrafast absorption dynamics in bilayer inas quantum dot waveguide
Author :
Malins, D.B. ; Gomez-Iglesias, A. ; Spencer, P. ; Clarke, E. ; Murray, R. ; Miller, A.
Author_Institution :
Sch. of Phys. & Astron., Univ. of St. Andrews
Abstract :
A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V. Such favourable properties are desirable for intensity and phase modulators
Keywords :
III-V semiconductors; Stark effect; gallium arsenide; indium compounds; optical waveguides; optoelectronic devices; quantum dots; ridge waveguides; -8 V; 1340 nm; 40 nm; 7 ps; InAs-GaAs; Stark effect; phase modulators; quantum dot ridge waveguide; ultrafast absorption dynamics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071221
