• DocumentCode
    931468
  • Title

    Minority carrier lifetime measurement in GaAs

  • Author

    Pence, Ira W., Jr. ; Greiling, Paul T.

  • Author_Institution
    General Electric Company, Schenectady, N. Y.
  • Volume
    62
  • Issue
    7
  • fYear
    1974
  • fDate
    7/1/1974 12:00:00 AM
  • Firstpage
    1030
  • Lastpage
    1031
  • Abstract
    A technique for the determination of relatively short carrier lifetimes (< 1 ns) is presented. By measuring the frequency dependence of the diffusion capacitance of a one-sided abrupt-junction GaAs diode, the minority carrier lifetime can be obtained. The method has the advantages that it is repeatable after exposing the diode to further processing, the diode can be mounted in a convenient package so that no special handling precautions are necessary, and the method can be automated.
  • Keywords
    Admittance; Capacitance measurement; Charge carrier lifetime; Frequency dependence; Frequency measurement; Gallium arsenide; Least squares approximation; Parasitic capacitance; Semiconductor device packaging; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9557
  • Filename
    1451487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=931468