Title :
Minority carrier lifetime measurement in GaAs
Author :
Pence, Ira W., Jr. ; Greiling, Paul T.
Author_Institution :
General Electric Company, Schenectady, N. Y.
fDate :
7/1/1974 12:00:00 AM
Abstract :
A technique for the determination of relatively short carrier lifetimes (< 1 ns) is presented. By measuring the frequency dependence of the diffusion capacitance of a one-sided abrupt-junction GaAs diode, the minority carrier lifetime can be obtained. The method has the advantages that it is repeatable after exposing the diode to further processing, the diode can be mounted in a convenient package so that no special handling precautions are necessary, and the method can be automated.
Keywords :
Admittance; Capacitance measurement; Charge carrier lifetime; Frequency dependence; Frequency measurement; Gallium arsenide; Least squares approximation; Parasitic capacitance; Semiconductor device packaging; Semiconductor diodes;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9557
