• DocumentCode
    932187
  • Title

    Breakover and negative resistance in polycrystalline silicon n-π-n DIAC´s

  • Author

    Muñoz, E. ; Mónico, J.P. ; Padilla, I.

  • Author_Institution
    Universidad Autónoma de Madrid, Madrid, Spain
  • Volume
    62
  • Issue
    10
  • fYear
    1974
  • Firstpage
    1394
  • Lastpage
    1395
  • Abstract
    The switching characteristics of polysilicon n-π-n devices present an extended negative-resistance region and allow large current densities. A breakover threshold field of 104V/cm has been deduced. It is suggested that polysilicon devices should be explored for switching applications.
  • Keywords
    Anodes; Bipolar integrated circuits; Chemical vapor deposition; Conductivity; Current density; Gold; Semiconductor diodes; Silicon; Switches; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9632
  • Filename
    1451562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=932187