Title :
Breakover and negative resistance in polycrystalline silicon n-π-n DIAC´s
Author :
Muñoz, E. ; Mónico, J.P. ; Padilla, I.
Author_Institution :
Universidad Autónoma de Madrid, Madrid, Spain
Abstract :
The switching characteristics of polysilicon n-π-n devices present an extended negative-resistance region and allow large current densities. A breakover threshold field of 104V/cm has been deduced. It is suggested that polysilicon devices should be explored for switching applications.
Keywords :
Anodes; Bipolar integrated circuits; Chemical vapor deposition; Conductivity; Current density; Gold; Semiconductor diodes; Silicon; Switches; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9632
