DocumentCode
932233
Title
Unipolar "Field-Effect" Transistor
Author
Dacey, G.C. ; Ross, I.M.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, New Jersey
Volume
41
Issue
8
fYear
1953
Firstpage
970
Lastpage
979
Abstract
Unipolar "field-effect" transistors of a type suggested by W. Shockley have been constructed and tested. The idealized theory of Shockley has been extended to cover the actual geometries involved, and design nomographs are presented. It is found that these structures can be designed in such a way as to yield a negative resistance at the input terminals. The characteristics of several units are presented and analyzed. It is shown that these characteristics are in substantial agreement with the extended theory. Finally a speculative evaluation of the possible future applications of field effect transistors is made.
Keywords
Conductivity; FETs; Geometry; Germanium; Helium; Laboratories; Semiconductivity; Telephony; Testing; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1953.274285
Filename
4051425
Link To Document