DocumentCode :
932303
Title :
The characteristics of CdSxSe1-xthin-film transistors
Author :
Weng, T.H.
Volume :
62
Issue :
10
fYear :
1974
Firstpage :
1404
Lastpage :
1404
Abstract :
Thin-film transistors were fabricated using CdSxSe1-xsemiconducting alloys prepared by flash evaporation of the mixture of CdS and CdSe compounds.
Keywords :
Absorption; Annealing; Electron traps; Electronic circuits; Insulation; Semiconductor films; Substrates; Thin film circuits; Thin film transistors; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1974.9644
Filename :
1451574
Link To Document :
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