DocumentCode :
932601
Title :
A novel MONOS-type nonvolatile memory using high-κ dielectrics for improved data retention and programming speed
Author :
Wang, Xuguang ; Liu, Jun ; Bai, Weiping ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Volume :
51
Issue :
4
fYear :
2004
fDate :
4/1/2004 12:00:00 AM
Firstpage :
597
Lastpage :
602
Abstract :
This paper presents a novel metal-oxide-nitride-oxide-silicon (MONOS)-type nonvolatile memory structure using hafnium oxide (HfO2) as tunneling and blocking layer and tantalum pentoxide (Ta2O5) as the charge trapping layer. The superiorities of such devices to traditional SiO2-Si3N4-SiO2 stack devices in obtaining a better tradeoff between faster programming and better retention are illustrated based on a band engineering analysis. The experimental results demonstrate that the fabricated devices can be programmed as fast as 1 μs and erased from 10 ns at an 8-V gate bias. The retention decay rate of this device is improved by a factor more than three as compared to the conventional MONOS/SONOS type devices. Excellent endurance and read disturb performance are also demonstrated.
Keywords :
MOS memory circuits; dielectric properties; electron traps; tunnelling; MONOS-type nonvolatile memory; SiO2; band engineering analysis; blocking layer; charge trapping layer; data retention; endurance; gate bias; hafnium oxide; high-k dielectrics; metal-oxide-nitride-oxide-silicon; programming speed; read disturb performance; retention decay rate; tantalum pentoxide; tunneling; Dielectrics; Hafnium oxide; MONOS devices; Nonvolatile memory; Power engineering and energy; SONOS devices; Semiconductor memory; Silicon; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2004.824684
Filename :
1275645
Link To Document :
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