Title :
X-Band Burnout Characteristics of GaAs MESFET´s
Author :
Whalen, James J. ; Kemerley, Robert T. ; Rastefano, Elisee
Abstract :
X-band µs pulse, ms pulse, and CW-burnout data have been measured for two commercially available 1- µm gate GaAs MESFET´s. Values of incident pulse power required to cause burnout indicate a threshold level for pulse durations 0.2 µs or longer and for CW. The incident power threshold level for burnout is in the range 3 to 6 W for the MESFET type with a Ti/Pt/Au gate metallization and in the range 1.5 to 3 W for the MESFET type with an Al gate metallization. Many MESFET´s were observed to fail during a single pulse.
Keywords :
Gallium arsenide; MESFETs; MMICs; Metallization; Microwave FET integrated circuits; Microwave devices; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Pulse measurements;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1982.1131409
