Title :
Enhanced hot-carrier degradation due to water-related components in TEOS/O3 oxide and water blocking with ECR-SiO2 film
Author :
Shimoyama, Nobuhiro ; Machida, Katsuyuki ; Takahashi, Jun-ichi ; Murase, Katsumi ; Minegishi, Kazushige ; Tsuchiya, Toshiaki
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
9/1/1993 12:00:00 AM
Abstract :
The authors point out that a TEOS/O3-oxide layer used as an interlevel dielectric enhances hot-carrier degradation of MOSFETs due to the water-related components (water and/or silanols) contained in the layer. This results mainly from enhanced hot-electron trapping in the gate oxide and also from interface-trap generation. By applying an ECR-SiO2 layer under the TEOS/O3-oxide layer, tolerance against hot-carrier damage is improved to the level of MOSFETs without the TEOS/O3 oxide. From ESR measurement results, it is found that the spin density of the ECR-SiO2 film under the TEOS/O3 oxide is two orders lower than that of the ECR-SiO 2 film only. It is suggested that the dangling bonds in the ECR-SiO2 film effectively trap water diffusing from the water-containing overlayer
Keywords :
VLSI; dangling bonds; electron traps; hot carriers; insulated gate field effect transistors; paramagnetic resonance of defects; water; ECR-SiO2 layer; ESR; MOSFETs; SiO2; TEOS/O3-oxide layer; VLSI; dangling bonds; enhanced hot carrier degradation; gate oxide; hot-electron trapping; interface-trap generation; interlevel dielectric; silanols; spin density; water blocking; water-related components; Degradation; Density measurement; Dielectrics; Electrons; Fabrication; Hot carriers; Insulation; MOSFET circuits; Paramagnetic resonance; Planarization;
Journal_Title :
Electron Devices, IEEE Transactions on
