• DocumentCode
    933061
  • Title

    A new approach to determine the drain-and-source series resistance of LDD MOSFET´s

  • Author

    Chung, S.S.-S. ; Lee, Jenq-Sheng

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    40
  • Issue
    9
  • fYear
    1993
  • fDate
    9/1/1993 12:00:00 AM
  • Firstpage
    1709
  • Lastpage
    1711
  • Abstract
    A method for determining the intrinsic drain-and-source series resistance and the effective channel length of LDD MOSFET´s is proposed. The method is based on the experimentally measured device I-V characteristics and a new parameter extraction procedure. A consistent set of the effective channel length and the gate-voltage-dependent drain-and-source series resistance was thus determined. The comparison between the measured and experimental drain current characteristics shows excellent agreement using the present model values
  • Keywords
    insulated gate field effect transistors; semiconductor device models; LDD MOSFET´s; channel length; drain-and-source series resistance; Current measurement; Electrical resistance measurement; Length measurement; MOS devices; MOSFET circuits; Parameter extraction; Resistors; SPICE; Voltage; Wiring;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.231580
  • Filename
    231580
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=933061