• DocumentCode
    933188
  • Title

    I-V characteristics for Silicon Schottky solar cells

  • Author

    Anderson, Wayne A. ; Milano, R.A.

  • Author_Institution
    Rutgers University, New Brunswick, N.J.
  • Volume
    63
  • Issue
    1
  • fYear
    1975
  • Firstpage
    206
  • Lastpage
    208
  • Abstract
    A special-layered Schottky solar cell has been constructed which produces 9.5-percent sunlight efficiency over a 1-cm2area. This solar cell has a fill factor of 0.60 compared to 0.58 for a commercial p-n silicon cell. Series resistance of 5 Ω is shown to reduce the theoretical fill factor from 0.67 to 0.42 for a Schottky cell. The diode quality factor n is shown to significantly increase open-circuit voltage and yet not appreciably influence the fill factor.
  • Keywords
    Equations; Fluctuations; Light scattering; Magnetic fields; Nonhomogeneous media; Photovoltaic cells; Plasma transport processes; Rough surfaces; Silicon; Tellurium;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1975.9727
  • Filename
    1451657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=933188