Correlation of electron density changes with optical frequency shifts in optically injected semiconductor lasers

Author

Al-Hosiny, Najm M. ; Henning, Ian D. ; Adams, Michael J.

Author_Institution

Dept. of Electron. Syst. Eng., Essex Univ., Colchester, UK

Volume

42

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

570

Lastpage

580

Abstract

We have studied experimentally and theoretically the dynamics of electron density in a semiconductor laser subject to a wide range of optical injection strength. Within the locking bandwidth, three-dimensional injection locking stability maps were generated to present a complete picture of locking. Beyond the locking range, resonance frequency shifts were observed and systematically investigated. This phenomenon was successfully correlated with the variation of carrier density and theoretically verified.

Keywords

electron density; laser mode locking; semiconductor lasers; carrier density; electron density; locking bandwidth; optical frequency shifts; optical injection; resonance frequency shifts; semiconductor lasers; three-dimensional injection locking stability maps; Bandwidth; Charge carrier density; Electron optics; Injection-locked oscillators; Laser theory; Laser transitions; Resonance; Resonant frequency; Semiconductor lasers; Stability; Cavity resonance shift; charge carrier density; injection locking; optical injection; semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2006.874754

Filename

1632082