Title :
CW oscillation characteristics of GaAs Schottky-barrier gate field-effect transistors
Author :
Maeda, Minoru ; Takahashi, Susumu ; Kodera, Hiroshi
Author_Institution :
Hitachi Ltd., Kokubunji, Tokyo, Japan
Abstract :
The CW oscillation characteristics of GaAs Schottky-barrier gate FET´s have been examined at 10 GHz. The maximum output power of 41.2 mW and the maximum efficiency of 15.6 percent have been obtained for the GaAs FET with a gate length of 1.5 µm and an electrode width of 300 µm. The experimental results have shown that the GaAs FET possesses promising features for an oscillator application as well as an amplifier application.
Keywords :
Circuits; Frequency; Gallium arsenide; Gunn devices; Microwave FETs; Microwave oscillators; Power generation; Schottky diodes; Signal design; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.9740
