Temperature Stabilization of GaAs MESFET Oscillators Using Dielectric Resonators

A simple model of the temperature stabilization of dielectric resonator FET oscillators (DRO´s) is presented. Deduced from the oscillation condition, the model furnishes relations for oscillation power and frequency stability with temperature. A stack resonator with an appropriate linear resonance frequency/temperature characteristic has been developed and used to stabilize a DRO: frequency stability of +- 120 kHz over - 20°C to 80°C ( ^delta=+- 0.1 ppm/K) at 11.5 GHz has been achieved.