Single barrier varactors for submillimeter wave power generation

Author

Nilsen, Svein M. ; Grönqvist, Hans ; Hjelmgren, Hans ; Rydberg, Anders ; Kollberg, Erik L.

Author_Institution

Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

41

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

572

Lastpage

580

Abstract

Theoretical work on single barrier varactor (SBV) diodes indicates that the efficiency of a tripler with a SBV diode has a maximum for a considerably smaller capacitance variation than previously thought. SBV diodes based on GaAs, InGaAs and InAs have been fabricated and their DC properties have been tested. Detailed modeling of the carrier transport properties of the SBV device is carried out in two steps. First, the semiconductor transport equations are solved simultaneously, using a finite difference scheme in one dimension. Second, the calculated I -V and C-V characteristics are used by a multiplier simulator to calculate the optimum impedances and output powers at the frequencies of interest. The authors have developed an analysis technique which complements the harmonic balance technique. Simulations for a case study of a 750-GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes

Keywords

frequency multipliers; semiconductor device models; solid-state microwave devices; submillimetre wave devices; varactors; 750 GHz; C-V characteristics; DC properties; GaAs; I-V characteristics; InAs; InGaAs; SBV diode; analysis technique; carrier transport properties; conversion efficiency; finite difference scheme; modeling; multiplier; multiplier simulator; optimum impedances; output powers; power generation; semiconductor transport equations; single barrier varactor; submillimeter wave; tripler; Capacitance; Difference equations; Finite difference methods; Gallium arsenide; Impedance; Indium gallium arsenide; Power generation; Semiconductor diodes; Testing; Varactors;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.231648

Filename

231648