Evaluation of integrated tuning elements with SIS devices

Author

Dierichs, M.M.T.M. ; Noningh, C.E. ; Panhuyzen, R.A. ; Feenstra, B.J. ; Skalare, A. ; Wijnbergen, J.J. ; Stadt, H.v.d. ; De Graauw, Th.

Author_Institution

Dept. of Appl. Phys. & Mater. Sci. Centre, Groningen Univ., Netherlands

Volume

41

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

605

Lastpage

608

Abstract

The resonances of integrated tuning stubs in combination with SIS (superconductor-insulator-superconductor) detectors are measured and calculated. The predicted resonances are compared with measurements of stubs integrated with Nb-Al₂O₃-Nb junctions in a log-periodic antenna. Stubs of different lengths have been investigated on different substrates (on 200-mm thick quartz and on a 7-mm thick silicon membrane) and the results show a fairly good agreement with the model calculations. Quartz substrates showed resonances up to 640 GHz, while for silicon membranes stub resonances reach up to as 480 GHz. An observed resonance at 560 GHz is probably a substrate effect from the membrane. The gap frequency for all the samples is 670 GHz and no resonances are detected above this frequency. Up to the maximum detected frequency dispersion is found to be negligible

Keywords

equivalent circuits; resonance; submillimetre wave devices; superconducting junction devices; superconducting microwave devices; tuning; 480 to 670 GHz; Nb-Al₂O₃-Nb junctions; SIS detectors; Si membrane; SiO₂ substrate; gap frequency; integrated tuning elements; log-periodic antenna; quartz substrate; resonances; superconductor-insulator-superconductor; tuning stubs; Antenna measurements; Biomembranes; Capacitance; Detectors; Frequency; Inductance; Niobium; Resonance; Silicon; Solid modeling;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.231653

Filename

231653