DocumentCode :
933652
Title :
Evaluation of integrated tuning elements with SIS devices
Author :
Dierichs, M.M.T.M. ; Noningh, C.E. ; Panhuyzen, R.A. ; Feenstra, B.J. ; Skalare, A. ; Wijnbergen, J.J. ; Stadt, H.v.d. ; De Graauw, Th.
Author_Institution :
Dept. of Appl. Phys. & Mater. Sci. Centre, Groningen Univ., Netherlands
Volume :
41
Issue :
4
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
605
Lastpage :
608
Abstract :
The resonances of integrated tuning stubs in combination with SIS (superconductor-insulator-superconductor) detectors are measured and calculated. The predicted resonances are compared with measurements of stubs integrated with Nb-Al2O3-Nb junctions in a log-periodic antenna. Stubs of different lengths have been investigated on different substrates (on 200-mm thick quartz and on a 7-mm thick silicon membrane) and the results show a fairly good agreement with the model calculations. Quartz substrates showed resonances up to 640 GHz, while for silicon membranes stub resonances reach up to as 480 GHz. An observed resonance at 560 GHz is probably a substrate effect from the membrane. The gap frequency for all the samples is 670 GHz and no resonances are detected above this frequency. Up to the maximum detected frequency dispersion is found to be negligible
Keywords :
equivalent circuits; resonance; submillimetre wave devices; superconducting junction devices; superconducting microwave devices; tuning; 480 to 670 GHz; Nb-Al2O3-Nb junctions; SIS detectors; Si membrane; SiO2 substrate; gap frequency; integrated tuning elements; log-periodic antenna; quartz substrate; resonances; superconductor-insulator-superconductor; tuning stubs; Antenna measurements; Biomembranes; Capacitance; Detectors; Frequency; Inductance; Niobium; Resonance; Silicon; Solid modeling;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.231653
Filename :
231653
Link To Document :
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