Design optimization of gate-all-around (GAA) MOSFETs

Author

Song, Jae Young ; Choi, Woo Young ; Park, Ju Hee ; Lee, Jong Duk ; Park, Byung-Gook

Author_Institution

Sch. of Electr. Eng., Inter-Univ. Semicond. Res. Center, Seoul, South Korea

Volume

5

Issue

3

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

186

Lastpage

191

Abstract

The design of gate-all-around (GAA) MOSFETs was optimized and compared with that of double-gate MOSFETs. We discussed the optimal ratio of the fin width to the gate length and investigated short-channel effects of GAA MOSFETs. Using three-dimensional simulations, we confirmed that short-channel effects were properly suppressed although the fin width was the same as the gate length in GAA MOSFETs. Finally, we compared cubical channel GAA MOSFETs with cylindrical-channel ones. As a result, it was observed that the latter showed the maximized ratio of the fin width to the gate length up to 1.2.

Keywords

MOSFET; semiconductor device models; cubical channel gate-all-around MOSFETs; cylindrical-channel GAA MOSFETs; double-gate MOSFETs; fin width; gate length; short-channel effects; three-dimensional simulations; Collaborative work; Design optimization; Electrodes; MOSFETs; Shape; Silicon; Substrates; Transconductance; Cylindrical-channel MOSFETs; double-gate (DG) MOSFET; gate-all-around (GAA) MOSFET;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2006.869952

Filename

1632132