Design optimization of gate-all-around (GAA) MOSFETs

The design of gate-all-around (GAA) MOSFETs was optimized and compared with that of double-gate MOSFETs. We discussed the optimal ratio of the fin width to the gate length and investigated short-channel effects of GAA MOSFETs. Using three-dimensional simulations, we confirmed that short-channel effects were properly suppressed although the fin width was the same as the gate length in GAA MOSFETs. Finally, we compared cubical channel GAA MOSFETs with cylindrical-channel ones. As a result, it was observed that the latter showed the maximized ratio of the fin width to the gate length up to 1.2.