Parameter extraction of microwave transistors using a hybrid gradient descent and tree annealing approach

Author

Skaggs, Steven G. ; Gerber, Jason ; Bilbro, Griff ; Steer, Michael B.

Author_Institution

High Frequency Electron. Lab., North Carolina State Univ., Raleigh, NC, USA

Volume

41

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

726

Lastpage

729

Abstract

Tree annealing is a robust optimization scheme which can be used to find the valleys of an error surface. The problem of entrapment in local minima is not a factor with this type of optimization, but it is much slower than gradient-based techniques. The method presented here attempts to take advantage of the speed of gradient-based methods and of the efficient pseudorandom searching abilities of tree annealing. The result is a technique which behaves as a directed multistart gradient method. All minima encountered during optimization are recorded, thus providing alternatives in case of a nonphysical final solution. The technique is used in the extraction of a modified Materka-Kacprzak model of a GaAs MESFET

Keywords

Schottky gate field effect transistors; optimisation; semiconductor device models; solid-state microwave devices; transistors; GaAs; MESFET; directed multistart gradient method; error function; gradient descent; gradient-based techniques; hybrid method; microwave transistors; modified Materka-Kacprzak model; parameter extraction; pseudorandom searching; robust optimization scheme; tree annealing; Equivalent circuits; Gallium arsenide; Gradient methods; MESFETs; Microwave circuits; Microwave transistors; Parameter extraction; Predictive models; Robustness; Simulated annealing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.231673

Filename

231673