Title :
Effect of controlled asymmetry on the switching characteristics of ring-based MRAM design
Author :
Mani, Anand Subra ; Geerpuram, Dwarakanath ; Baskaran, Vidhya Shankar ; Metlushko, Vitali
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Chicago, IL, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
It was suggested that the shape effects are responsible for the vortex formation and chirality in circular ring elements. We found that the introduction of well-controlled asymmetry into permalloy rings provides precise control of the switching mechanism and leads to improved switching characteristics.
Keywords :
Permalloy; magnetic storage; magnetic switching; random-access storage; NiFe; chirality; controlled asymmetry effect; magnetic anisotropy; magnetic memories; permalloy rings; ring-based MRAM design; switching mechanism; vortex formation; Magnetic anisotropy; Magnetic domain walls; Magnetic switching; Magnetization; Magnetosphere; Perpendicular magnetic anisotropy; Polarization; Random access memory; Remanence; Shape; Magnetic anisotropy; magnetic memories; magnetization processes; magnetization reversal;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2006.874041
