A Broadband Model Over 1–220 GHz for GSG Pad Structures in RF CMOS

Author

Jun Liu ; Zhiping Yu ; Lingling Sun

Author_Institution

Key Lab. for RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China

Volume

35

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

696

Lastpage

698

Abstract

A broadband model for ground-signal-ground (GSG) pad structures in RF CMOS is presented. The inductive parasitics of the S- and G-pads are considered. Fringe capacitors are introduced to capture the nonideal capacitive parasitics of the S-pad. A method to analytically extract the model parameters is proposed. The model renders excellent agreement with the measured and simulated data over 1-220 GHz, for a GSG pad structure manufactured in TSMC 90-nm RF CMOS technology.

Keywords

CMOS integrated circuits; radiofrequency integrated circuits; G-pads; GSG pad structures; S-pads; TSMC RF CMOS technology; broadband model; frequency 1 GHz to 220 GHz; fringe capacitors; ground-signal-ground pad structures; inductive parasitics; nonideal capacitive parasitics; size 90 nm; Broadband communication; CMOS integrated circuits; Integrated circuit modeling; Radio frequency; Scattering parameters; Semiconductor device modeling; Substrates; GSG pad structures; RF CMOS; broadband model; broadband model.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2322366

Filename

6817530