DocumentCode
934014
Title
Microwave Characteristics of an Optically Controlled GaAs MESFET
Author
Mizuno, Hideki
Volume
31
Issue
7
fYear
1983
Firstpage
596
Lastpage
600
Abstract
This paper presents the results of an experimental investigation of microwave characteristics of a GaAs MESFET under optically direct-controlled conditions. The gain, drain current, and S-parameters were measured under various optical conditions in the frequency region from 3.0 GHz to 8.0 GHz, and it was found that they can be controlled by varying the incident light intensity in the same manner as when varying the gate bias voltage. As applications of this phenomenon, optical/microwave transformers and an optically switched amplifier were investigated.
Keywords
Current measurement; Frequency measurement; Gain measurement; Gallium arsenide; Lighting control; MESFETs; Optical control; Scattering parameters; Stimulated emission; Voltage control;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1983.1131551
Filename
1131551
Link To Document