Title :
Optimum Schottky-barrier height for high-efficiency microwave transferred-electron diodes
Author :
Hariu, T. ; Shibata, Y.
Author_Institution :
Tohoku University, Sendai, Japan
fDate :
5/1/1975 12:00:00 AM
Abstract :
Optimum Schottky-barrier heights are given to make high-efficiency GaAs and InP tnmferred-electron diodes by injecting electrons directly into the upper valley from cathode contact.
Keywords :
Ambient intelligence; Dielectric materials; Filtering; Filters; Material storage; Process design; Schottky diodes; Semiconductor materials; Signal processing; Solid state circuits;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.9837
