• DocumentCode
    934323
  • Title

    Effects of tunneling on high-efficiency IMPATT avalanche diodes

  • Author

    Chive, M. ; Constant, E. ; Lefebvre, M. ; Pribetich, J.

  • Author_Institution
    Université des Sciences et Techniques de Lille, Villeneuve d´´Ascq, France
  • Volume
    63
  • Issue
    5
  • fYear
    1975
  • fDate
    5/1/1975 12:00:00 AM
  • Firstpage
    824
  • Lastpage
    826
  • Abstract
    A theoretical and experimental study is presented of the effects of tunnel injection on high-efficiency IMPATT avalanche diodes characterized by a high low-doping profile. Some characteristics usually observed in such high-efficiency IMPATT oscillators are explained, taking into account the effects of tunneling.
  • Keywords
    Cathodes; Doping; Electrons; Equations; Indium phosphide; Schottky barriers; Schottky diodes; Thermionic emission; Threshold current; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1975.9838
  • Filename
    1451768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=934323