Title :
A simple method of bipolar transistor field factor measurement
Author_Institution :
Indian Institute of Technology, Madras, India
fDate :
5/1/1975 12:00:00 AM
Abstract :
A method of bipolar transistor field factor measurement is described. The method is based on the measurement of the open-circuit voltage between the collector-base terminals when a forward bias voltage is applied across the emitter-base terminals. The theory and the experimental measurement on different transistor types are presented.
Keywords :
Bipolar transistors; Capacitance measurement; Circuits; Electrons; Germanium alloys; Impurities; Q measurement; Silicon alloys; Voltage measurement;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.9840
