DocumentCode :
934812
Title :
Theory and Measurement of Back Bias Voltage in IMPATT Diodes
Author :
Holway, Lowell H., Jr. ; Chu, Shiou Lung G
Volume :
31
Issue :
11
fYear :
1983
Firstpage :
916
Lastpage :
922
Abstract :
The derivation of the back bias voltage is shown to require carrying the derivation of the Read equation to one order of approximation higher than that which is necessary to obtain the quasi-static result. A new term is shown to be needed in the expression for the back bias voltage which changes its sign to positive under conditions in which the older analyses indicate a negative back bias. Experimental measurements of V bb as a function of V RF were made using a network analyzer and are in agreement with the new analysis. At frequencies considerably below the range at which our measurements were made, a strong negative back bias voltage is caused by the saturation current.
Keywords :
Computer simulation; Current measurement; Differential equations; Diodes; Frequency measurement; Gallium arsenide; Lungs; Partial differential equations; Radio frequency; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1983.1131632
Filename :
1131632
Link To Document :
بازگشت