• DocumentCode
    935114
  • Title

    Electrooptic modulation of multisilicon-on-insulator photonic wires

  • Author

    Barrios, Carlos Angulo

  • Author_Institution
    Univ. Politecnica de Valencia, Spain
  • Volume
    24
  • Issue
    5
  • fYear
    2006
  • fDate
    5/1/2006 12:00:00 AM
  • Firstpage
    2146
  • Lastpage
    2155
  • Abstract
    This paper proposes and analyzes electrically modulated submicrometer-size high-index-contrast waveguides (photonic wires) based on a multisilicon-on-insulator (MSOI) platform. Metal-oxide-semiconductor junctions are used to control the effective refractive index of the waveguides. The electrooptic structures are electrically and optically modeled. The performances of the studied configurations are analyzed and compared in terms of phase modulation efficiency, optical losses, and operation speed, and the feasibility of their fabrication is discussed. Calculations indicate that the proposed schemes can be used to achieve highly efficient phase shifters (VπLπ<1 V-cm) based on photonic wires on MSOI, with data transmission rates ranging from 3 to 10 Gb/s.
  • Keywords
    MIS devices; electro-optical modulation; micro-optics; optical losses; optical phase shifters; optical waveguides; phase modulation; refractive index; silicon-on-insulator; 3 to 10 Gbit/s; effective refractive index; electrooptic modulation; metal-oxide-semiconductor junctions; multisilicon-on-insulator photonic wires; optical losses; phase modulation efficiency; phase shifters; Electrooptic modulators; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Performance analysis; Phase modulation; Refractive index; Waveguide junctions; Wires; Device modeling; integrated optics; plasma dispersion effect; silicon optoelectronics;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2006.872277
  • Filename
    1632253