DocumentCode :
935154
Title :
Economic Aspects of Memory Built-in Self-Repair
Author :
Huang, Rei-Fu ; Chen, Chao-Hsun ; Wu, Cheng-Wen
Author_Institution :
Media Tek, Hsinchu
Volume :
24
Issue :
2
fYear :
2007
Firstpage :
164
Lastpage :
172
Abstract :
With the advent of deep-submicron technology and SoC design methodology, it´s possible to integrate heterogeneous cores from different sources in a single chip containing millions of gates. The yield of such a large chip is usually too low to be profitable. Therefore, yield enhancement is an important issue in SoC product development. Memory cores usually occupy a large proportion of the area of a typical SoC, and they normally have higher circuit density, so they tend to dominate SoC yield. This article presents cost and benefit models to evaluate the economic effectiveness of typical memory BISR implementations. Experimental results with a simulator based on these cost models show that memory size impacts cost-effectiveness more than production volume does.
Keywords :
DRAM chips; built-in self test; cost-benefit analysis; integrated circuit design; integrated circuit economics; integrated circuit testing; integrated circuit yield; system-on-chip; SoC design; SoC economic effectiveness; SoC product development; built-in self-repair; cost-benefit models; memory BISR implementations; yield enhancement; Algorithm design and analysis; Built-in self-test; Circuit faults; Circuit simulation; Circuit testing; Costs; Fault location; Nonhomogeneous media; Production; Redundancy; BIRA; BISR; BIST; built-in self-repair; economic models; overhead; redundancy analysis; yield;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/MDT.2007.41
Filename :
4237496
Link To Document :
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