Title :
Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s
Author :
Fukano, Hideki ; Yamanaka, Takayuki ; Tamura, Munehisa ; Kondo, Yasuhiro
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
5/1/2006 12:00:00 AM
Abstract :
This paper has demonstrated a 40-Gb/s low-driving-voltage electroabsorption modulator (EAM) having InGaAlAs/InAlAs multiquantum-well active core. A narrow core buried with polyimide provides a strong optical and electrical confinement, resulting in a maintained large extinction ratio (ER) and an increased 3-dB down frequency. The fabricated EAM shows a 3-dB down frequency as large as 46 GHz, even for the active-core length as long as 200 μm. The EAM operates at 40 Gb/s with an RF ER of 10.5 dB at a driving voltage as low as 0.79 V.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical fabrication; quantum well devices; 0.79 V; 40 Gbit/s; EAM; InGaAlAs-InAlAs; InGaAlAs/InAlAs multiquantum-well active core; electroabsorption modulators; extinction ratio; polyimide; Carrier confinement; Energy consumption; Erbium; Extinction ratio; Indium compounds; Microwave devices; Optical modulation; Optical transmitters; Quantum well devices; Voltage; Electroabsorption; InGaAlAs/InGaAs; electroabsorption modulator (EAM); low-driving voltage;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2006.872310
