Title :
Millimeter-wave IMPATT diodes with improved efficiency by using ion-implanted ohmic contact
Author :
Hirachi, Y. ; Nishi, H. ; Shinoda, M. ; Fukukawa, Y.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
The application of arsenic ion-implantation to the reduction of the contact resistance in the n+substrate of millimeter-wave IMPATT diodes is discussed. Single-drift-region-type IMPATT fabricated with these techniques exhibited output powers ∼600 mW at ΔTj = 200°C with 8.7-percent conversion efficiencies over frequency range of 52 to 60 GHz.
Keywords :
Digital filters; Diodes; Filtering; Frequency; Millimeter wave technology; Ohmic contacts; Pulse measurements; Signal analysis; Silicon; Substrates;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.9953
