DocumentCode :
935583
Title :
Developmental Germanium Power Transistors
Author :
Roka, E.G. ; Buck, R.E. ; Reiland, G.W.
Author_Institution :
Formerly Research Center, Minneapolis-Honeywell Regulator Co., Hopkins, Minn., now with Delco Radio Div. of General Motors Co., Kokomo, Ind.
Volume :
42
Issue :
8
fYear :
1954
Firstpage :
1247
Lastpage :
1250
Abstract :
A developmental germanium power transistor is described. The collector heat dissipation is 20 watts at room temperature when the transistor is properly mounted. The unit delivers a peak collector current in the order of 1 ampere and has a peak collector voltage of 60 volts. Problems concerning heat transfer and mounting are discussed. Electrical characteristics for 75 degrees F. and 175 degrees F. mounting base temperature are given.
Keywords :
Electromagnetic heating; Frequency; Germanium; Heat transfer; Insertion loss; Magnetic field measurement; Microwave devices; Power transistors; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1954.274793
Filename :
4051782
Link To Document :
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