DocumentCode
935583
Title
Developmental Germanium Power Transistors
Author
Roka, E.G. ; Buck, R.E. ; Reiland, G.W.
Author_Institution
Formerly Research Center, Minneapolis-Honeywell Regulator Co., Hopkins, Minn., now with Delco Radio Div. of General Motors Co., Kokomo, Ind.
Volume
42
Issue
8
fYear
1954
Firstpage
1247
Lastpage
1250
Abstract
A developmental germanium power transistor is described. The collector heat dissipation is 20 watts at room temperature when the transistor is properly mounted. The unit delivers a peak collector current in the order of 1 ampere and has a peak collector voltage of 60 volts. Problems concerning heat transfer and mounting are discussed. Electrical characteristics for 75 degrees F. and 175 degrees F. mounting base temperature are given.
Keywords
Electromagnetic heating; Frequency; Germanium; Heat transfer; Insertion loss; Magnetic field measurement; Microwave devices; Power transistors; Temperature; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1954.274793
Filename
4051782
Link To Document