DocumentCode :
9356
Title :
Low-Power CMOS Image Sensor Based on Column-Parallel Single-Slope/SAR Quantization Scheme
Author :
Fang Tang ; Chen, Denis Guangyin ; Bo Wang ; Bermak, Amine
Author_Institution :
Chongqing Univ., Chongqing, China
Volume :
60
Issue :
8
fYear :
2013
fDate :
Aug. 2013
Firstpage :
2561
Lastpage :
2566
Abstract :
This paper presents a low-power megapixel image sensor design. In this paper, a column-parallel 11-bit two-step quantization scheme is proposed. It consists of a 3-bit single-slope analog-to-digital converter (ADC) and an 8-bit successive approximation register (SAR) ADC. The power consumption of the column-parallel circuitry is significantly reduced when compared with the traditional single-slope ADC and other low-power ADC schemes because smaller SAR ADC reference voltages are selected after quantizing the first three most significant bits. In addition, as only an 8-bit SAR ADC is required in the proposed quantization scheme, the capacitor array matching can be greatly relaxed compared with an 11-bit SAR ADC thus, resulting in noncalibration feature. A 1200 × 800 pixel resolution color CMOS image sensor (CIS) is fabricated using TSMC 0.18-μm CIS technology. The measurement result shows that the total power consumption figure-of-merit of this research is only 1.33 mW/megapixel/frame under 3.3-V (analog)/1.8-V (digital) power supply.
Keywords :
CMOS image sensors; analogue-digital conversion; image colour analysis; image resolution; low-power electronics; ADC reference voltages; SAR quantization scheme; TSMC CIS technology; analog-to-digital converter; capacitor array matching; column-parallel circuitry; column-parallel single-slope scheme; low-power CMOS image sensor; megapixel image sensor design; noncalibration feature; pixel resolution color; size 0.18 mum; successive approximation register; two-step quantization scheme; voltage 1.8 V; voltage 3.3 V; word length 11 bit; word length 3 bit; word length 8 bit; APS; CMOS image sensor; SAR; low power; single slope;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2268207
Filename :
6547236
Link To Document :
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